In this work, 15 kV 4H-SiC Split-Gate Vertical Planar MOSFETs (SG-MOSFET) are demonstrated for the first time. Both the traditional MOSFET and SG-MOSFET were fabricated on the same 6-inch SiC wafer and achieved maximum breakdown voltages (BV) of 15930 V and 15080 V, respectively. This is the first demonstration of the split gate architecture on SiC for voltage ratings above 10 kV, and this BV was achieved using a Hybrid-Junction Termination Extension (JTE) edge termination. The fabricated SG-MOSFETs showed a reduction in gate charge as well as no significant deviation in forward conduction and blocking behavior when compared to their MOSFET counterparts. These results display the SG-MOSFET’s potential for lower switching power losses in ultra-high voltage devices without compromising device static performance. In the following text, the layout, static performance, and gate charge of the MOSFET and SG-MOSFET are described to show the exciting potential of the high voltage SG-MOSFET.

Demonstration of High Voltage (15kV) Split-Gate 4H-SiC MOSFETs

6.5 kV-rated 4H-SiC MOSFETs have been successfully fabricated and demonstrated on 60 µm-thick, 1.2×1015 cm-3 doped N-type epi-layer on 6-inch, 4H-SiC N+ substrates. Devices were fabricated at the 6-inch SiC foundry, X-FAB, TX, USA. Active and edge termination areas of high voltage (>3.3 kV) SiC devices require critical design consideration due to implant straggles from the low background doping concentration. Despite the fabrication and design challenges, we have demonstrated Ron,sp of 47 mΩ-cm2 with a breakdown voltage of 7.9 kV with a very low leakage current using ring-based edge termination structure. Devices were then diced and packaged in a SUNY Poly’s custom-made package to evaluate short circuit capabilities. Short circuit withstand time of 6.2 µs was recorded from the nominal device, along with 7 µs and 13 µs from the device with narrower JFET width and wider channel length, respectively.

Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

This presentation reports the experimental results of the fabricated 4H-SiC Lateral Junction Field Effect Transistor (LJFET) and cell-to-cell integrated Lateral Bi-directional JFET (LBiDJFET). It was found that the reverse conduction characteristics of SiC LJFET were better than the forward conduction characteristics in terms of on-state resistance. The conduction mechanism of LBiDJFET can be described by the series connection of the forward and reverse conduction of LJFETs. This intriguing behavior of the cell-to-cell integration approach is promising because it can greatly reduce the wafer area consumed while achieving the bi-directional functions.

Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)

**Session Chairs:**
 Aivars Lelis, U. S. Army Research Laboratory, United States
 Anant Agarwal, Massachusetts Institute of Technology, United States

SiC Devices 2: Novel Device Designs

technical paper

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

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IEEE WiPDA 2021

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Session Chairs:**
 
 Aivars Lelis, U. S. Army Research Laboratory, United States
 Anant Agarwal, Massachusetts Institute of Technology, United States

Justin Lynch

3

1

SHORT BIO

Presentations

Demonstration of High Voltage (15kV) Split-Gate 4H-SiC MOSFETs

Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)