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Xinyu Zhou

Stanford University

3

presentations

SHORT BIO

Xin Yu Zhou (S’15-M’18-SM’21) was born in Tsingtao, Shandong Province, China. He received the M.Sc. and Ph.D. degrees in electronic engineering from City University of Hong Kong, Kowloon, Hong Kong, in 2014 and 2018, respectively. From 2014 to 2015, he was a research assistant with the Sun Yat-sen University - Carnegie Mellon University (SYSU-CMU) shunde international joint research institute, China. From 2018 to 2020, he was a postdoctoral fellow with Department of Electrical Engineering at the City University of Hong Kong, Kowloon, Hong Kong. From 2020 to 2021, he was a postdoctoral research associate with Department of Electrical Engineering at the Princeton University, New Jersey, U.S.A. He is currently a postdoctoral research fellow with the Department of Electrical Engineering at the Stanford University, California, USA. His current research interests include broadband high-efficiency and high-linearity GaN power amplifier in RF and millimeter-wave, integrated circuits, and microwave passive circuits. Dr. Zhou was a recipient of First Place Award of the High Efficiency Power Amplifier Student Design Competition, IEEE Microwave Theory and Techniques Society (IEEE MTT-S) International Microwave Symposium (IMS) in 2017 and a recipient of Second Place Award of the same Student Design Competition in 2018. He is also the affiliate member of MTT-12 Microwave High-Power Techniques Committee. Dr. Zhou is currently the associate editor of IET Electronics Letters and a reviewer for over ten internationally referred journals and conferences, including four IEEE Transactions and two IEEE Letters.

Presentations

On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress

Shankar Bhawani and 11 other authors

Best Practices to Quantify Linearity Performance of GaN HEMTs for Power Amplifier Applications

Martinez Rafael Perez and 8 other authors

Design of Ka-Band Doherty Power Amplifier Using 0.15 μm GaN on SiC Process Based on Novel Complex Load Modulation

Xinyu Zhou and 3 other authors